Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

(2010) Byungjin Cho et al.   APPLIED PHYSICS LETTERS

Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure

(2010) Tzu-Yueh Chang et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”

(2009) R. Müller et al.   APPLIED PHYSICS LETTERS

Electron transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the effects of disorder and electron traps

(2009) S. L. M. van Mensfoort et al.   PHYSICAL REVIEW B

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Switching dynamics in non-volatile polymer memories

(2008) Frank Verbakel et al.   ORGANIC ELECTRONICS

Hole transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the role of energetic disorder

(2008) S. L. M. van Mensfoort et al.   PHYSICAL REVIEW B

Switching in polymeric resistance random-access memories (RRAMS)

(2007) H.L. Gomes et al.   ORGANIC ELECTRONICS