Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

标题
Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 15, Pages 153502
出版商
AIP Publishing
发表日期
2009-10-13
DOI
10.1063/1.3247881

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