Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

Title
Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages 063502
Publisher
AIP Publishing
Online
2009-02-10
DOI
10.1063/1.3079656

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