期刊
APPLIED PHYSICS LETTERS
卷 94, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3079656
关键词
CMOS integrated circuits; internal stresses; lattice constants; silicon-on-insulator; X-ray diffraction
资金
- U.S. Dept. of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain in the SOI channel. Mechanical constraint due to the overlying gate and the contribution of SOI underneath the e-SiC in the diffracting volume to the measurements can explain this difference.
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