Article
Chemistry, Physical
A. K. Tan, N. A. Hamzah, M. A. Ahmad, S. S. Ng, Z. Hassan
Summary: In this study, InGaN/GaN heterostructures were grown on a flat sapphire substrate using MOCVD technique. Results showed that a higher V/III ratio led to parasitic behavior by hydrogen dissociated from ammonia, which etched the InN and changed the growth morphology. Moreover, the InGaN thin films grown at higher V/III ratios exhibited more stable bandgap energy and improved electrical properties. The correlation between strain and carrier density was also discussed, and it was concluded that high-quality and thick InGaN thin films could be grown for solar cell applications at higher V/III ratio conditions.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Ping Ma, Xianliang Li, Yuchi Zhang, Le Han, Yan Xu
Summary: By synthesizing hierarchical spinel-type semiconductors MGa2O4 (M = Ni, Co) through a hydrothermal method and subsequent calcination, their gas sensing performances were systematically investigated, revealing that the TEA gas sensing properties are significantly influenced by M(II) ions in the spinel structure.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Ummer Altaf, Mohd Zubair Ansari, Seemin Rubab
Summary: The synthesis of Sn1-xAlxO2 (x = 0.0, 0.01, 0.02, 0.03, 0.04) nanoparticles by the sol-gel method and their characterization using various techniques revealed that increasing the aluminium content led to a decrease in the crystallite size and optical band gap. Photoluminance measurements showed violet emissions for all samples, with the 3% doped sample exhibiting the lowest intensity, indicating its potential for applications in photocatalysis and lithium-ion batteries. Additionally, 3% aluminium doping was found to be the optimum concentration for tin oxide samples in photocatalytic applications.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Energy & Fuels
S. Catalan-Gomez, E. Martinez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J. M. Ulloa
Summary: This study investigates the use of core-shell gallium nanoparticles as functional light scatterers on solar cells. By optimizing the nanoparticle size, the short-circuit current of the solar cells is significantly improved. The underlying physical mechanism is studied through optical measurements and simulations, and a method to reduce the plasmonic effect of the nanoparticles is demonstrated.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2024)
Article
Physics, Applied
Mithun Bhowmick, Haowen Xi, Bruno Ullrich
Summary: This article introduces a model that accurately fits the absorption saturation parameter linked to the effective electron density of states, allowing for the comparison of experimentally found absorption limits and their variations in compound semiconductors with theoretical expectations. This is crucial for certain optoelectronic device applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Review
Energy & Fuels
Jiaying Chen, Youtian Mo, Chaoying Guo, Jiansen Guo, Bingshe Xu, Xi Deng, Quan Xue, Guoqiang Li
Summary: The combination of III-V compound semiconductor materials and organic semiconductor materials is a potential pathway to solve the problems of conventional doped p-n junction solar cells. This review presents the recent progress of organic-inorganic hybrid solar cells based on polymers and III-V semiconductors, including materials, devices, growth processes, patterning and etching processes, advanced device structure designs, and optimization pathways for efficiency enhancement. The future development of such hybrid cells is also discussed.
Article
Chemistry, Multidisciplinary
B. Giroire, A. Garcia, S. Marre, T. Cardinal, C. Aymonier
Summary: A chemistry platform for the continuous synthesis of high-quality III-nitride quantum dots using supercritical solvents and short residence times was demonstrated. The GaN quantum dots produced exhibited strong UV photoluminescence and showed a continuous bandgap shift towards lower energies with increasing indium content. Additionally, an example of metal site substitution in the synthesis of InxGa1-xN solid solution was provided.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Ioannis E. Fragkos, Wei Sun, Damir Borovac, Renbo Song, Jonathan J. Wierer, Nelson Tansu
Summary: This study investigates an active region design based on InGaN / delta-InN quantum well (QW) for potential high-efficiency visible light emitters. The results demonstrate a large wavelength redshift and an increase in the electron-hole wavefunction overlap for the delta-structure compared to the conventional InGaN QW.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Titao Li, Wei Zheng, Siqi Zhu, Fei Wang, Yanming Zhu, Lemin Jia, Zeguo Lin, Feng Huang
Summary: (AlxGa1-x)(2)O-3 is a promising wide-band-gap sesquioxide for VUV photodetectors and high-power field-effect transistors. This study proposed a high-pressure O-2 (20 atm) annealing strategy to improve the crystallinity of beta-(AlxGa1-x)(2)O-3 and achieve a tunable optical band gap, revealing the local structure of Al3+ and the kinetic mechanism of Al3+ diffusion. The combination of HPOA-treated beta-(Al0.69Ga0.31)(2)O-3 films with p-type graphene led to the fabrication of a VUV photovoltaic detector with improved photovoltage and fast temporal response, providing an important strategy for enhancing the band-gap tunability of sesquioxides and zero-power-consumption photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Mohamed A. Helal, H. M. El-Sayed, Ahmed A. Maarouf, Mohamed M. Fadlallah
Summary: The study investigated the impact of different pore structures on 2D-TMD using density functional theory, revealing higher stability for smaller pores, lattice deformation and decreased Young's modulus with increasing pore size. Certain systems exhibited magnetism due to missing metal atoms, while the emergence of metal states at pore edges resulted in some systems being half-metallic. Oxygen passivation restored metallic behavior in the systems.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Physics, Applied
Philip C. Klipstein
Summary: In a photodiode made from a narrow bandgap III-V material such as InSb, the dominant dark current mechanism is thermal generation-recombination in the depletion region. XBn or XBp barrier detectors suppress the generation-recombination current by using a wide bandgap barrier material. Diffusion limited barrier detectors have a unity gain device architecture that is fundamentally different from traditional photodiodes. High performance barrier detector arrays for mid- and long-wave infrared detection have been developed using bulk alloy and type II superlattice (T2SL) absorbers.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Muhammad Yusrul Hanna, Muhammad Aziz Majidi, Ahmad R. T. Nugraha
Summary: In this study, we evaluated the performance of thermoradiative (TR) cells using III-V group semiconductors and aimed to identify the most efficient TR cell material among GaAs, GaSb, InAs, and InP. The efficiency of TR cells, which convert thermal radiation into electricity, is affected by factors such as bandgap, temperature difference, and absorption spectrum. To create an accurate model, we considered sub-bandgap and heat losses and employed density-functional theory to determine the energy gap and optical properties of each material. Our findings indicate that the absorptivity of the material can decrease the efficiency of TR cells, especially when considering sub-bandgap and heat losses. However, the effect of absorptivity on TR cell efficiency varies among different materials. GaSb exhibited the highest power density, while InP demonstrated the lowest. GaAs and InP showed relatively high efficiency without sub-bandgap and heat losses. InAs had lower efficiency when not considering losses but displayed higher resistance to sub-bandgap and heat losses compared to other materials, making it the best TR cell material among the III-V group of semiconductors.
Article
Nanoscience & Nanotechnology
Hardhyan Sheoran, Shi Fang, Fangzhou Liang, Zhe Huang, Shuchi Kaushik, Nethala Manikanthababu, Xiaolong Zhao, Haiding Sun, Rajendra Singh, Shibing Long
Summary: This article reports on the fabrication of high-performance deep ultraviolet photodetectors (DUV PDs) on metal-organic chemical vapor deposition (MOCVD)-grown beta-Ga2O3 heteroepitaxy. The fabricated DUV PDs exhibit stable operation at high temperature, with an ultralow dark current and a high photo-to dark-current ratio. These DUV PDs show high detection sensitivity and potential for solar-blind detection applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Rasmus Nielsen, Tomas H. Youngman, Hadeel Moustafa, Sergiu Levcenco, Hannes Hempel, Andrea Crovetto, Thomas Olsen, Ole Hansen, Ib Chorkendorff, Thomas Unold, Peter C. K. Vesborg
Summary: Research on selenium solar cells is gaining momentum again due to its potential for integration with existing photovoltaic technology and its low cost. However, there are still voltage deficiencies in single-junction selenium devices, calling for further study on the material properties.
JOURNAL OF MATERIALS CHEMISTRY A
(2022)
Article
Nanoscience & Nanotechnology
Daniel B. Straus, Robert J. Cava
Summary: By using solid-state synthesis, the band gap of halide perovskite CsPbBr3 can be continuously widened through homovalent substitution, allowing its optical properties to be tailored for absorptive and emissive applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Richard Liu, Callan McCormick, Can Bayram
Article
Multidisciplinary Sciences
Y. -C. Tsai, C. Bayram
SCIENTIFIC REPORTS
(2019)
Article
Materials Science, Multidisciplinary
H-P Lee, C. Bayram
MATERIALS RESEARCH EXPRESS
(2019)
Article
Physics, Applied
Kihoon Park, Can Bayram
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Chemistry, Multidisciplinary
Yi-Chia Tsai, Can Bayram
Article
Physics, Applied
Richard Liu, Eric Tucker, Soo Min Lee, Kalyan Kasarla, Callan McCormick, Can Bayram
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
Ahmed Mohamed, Kihoon Park, Can Bayram, Mitra Dutta, Michael A. Stroscio
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Hsuan-Ping Lee, Can Bayram
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Yi-Chia Tsai, Can Bayram, Jean-Pierre Leburton
Summary: The impact of Auger electron-hole asymmetry on the efficiency droop in InGaN-QW LEDs is investigated using OBQ-LEDsim. It is found that increasing the ratio of electron to hole suppresses Auger recombination, increases carrier screening, weakens quantum-confined Stark effects, and results in a blue shift in emission wavelength, leading to reduced efficiency droop in the LED.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Yi-Chia Tsai, Jean-Pierre Leburton, Can Bayram
Summary: This study reveals that the coexistence of strong internal polarization and large carrier effective mass contributes to a 51% efficiency droop under high current densities in traditional hexagonal-phase indium-gallium-aluminum-nitride (InGaAlN) light-emitting diodes (h-LEDs) compared to cubic-phase InGaAlN LEDs (c-LEDs). The analysis shows that c-LEDs, with their polarization-free nature and small carrier effective mass, exhibit enhanced current density at the onset of the droop, particularly in green c-LEDs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
J. Lee, Y. C. Chiu, M. A. Johar, C. Bayram
Summary: Cubic GaN epitaxy on large-area U-grooved silicon (100) dies is achieved by metalorganic chemical vapor deposition, exhibiting excellent structural and optical properties. Further improvement in internal quantum efficiency of cubic GaN can be achieved through selective etching.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Y. C. Chiu, C. Bayram
Summary: A method to reveal the low temperature absolute internal quantum efficiency of an InGaN-based LED is presented. By analyzing the structural and optical properties using various techniques, coupled with a channel-based recombination model, the low temperature absolute internal quantum efficiencies of the LED on sapphire and Si (111) substrates are determined as 27.5% and 71.1%, respectively. The higher low temperature absolute internal quantum efficiency of the former is attributed to lower defect density and strain. This study highlights the importance of considering temperature effects on the internal quantum efficiency of InGaN-based LEDs and proposes a method to accurately quantify their less than ideal performance.
APPLIED PHYSICS LETTERS
(2023)
Article
Optics
Jaekwon Lee, Jean-Pierre Leburton, Can Bayram
Summary: This article reports on the design tradeoffs and crucial design rules for traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green light-emitting diodes. The design rules include the elimination of an electron blocking layer, use of a wide quantum well, and choice of thin quantum barriers. These rules significantly increase the internal quantum efficiency of cubic green light-emitting diodes, making them crucial for next-generation light-emitting diodes.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Zhuoran Han, Can Bayram
Summary: Diamond p-type lateral Schottky barrier diodes with and without Al2O3 field plates are studied, showing stable leakage current density, high rectifying ratio, and high breakdown voltage.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Optics
J. Meyer, R. Liu, R. D. Schaller, H-P Lee, C. Bayram
JOURNAL OF PHYSICS-PHOTONICS
(2020)
