Local network structure of a-SiC:H and its correlation with dielectric function

The microscopic disordered structures of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) layers with different carbon contents have been determined based on the correlations between the dielectric function in the ultraviolet/visible region and the local bonding states studied by high-sensitivity infrared attenuated total reflection spectroscopy. We find that the microscopic structure of the a-Si1-xCx:H layers fabricated by plasma-enhanced chemical vapor deposition shows a sharp structural transition at a boundary of x = 6.3 at.%. In the regime of x <= 6.3 at. %, (i) the amplitude of the a-SiC:H dielectric function reduces and (ii) the SiH2 content increases drastically with x, even though most of the C atoms are introduced into the tetrahedral sites without bonding with H. In the regime of x > 6.3 at. %, on the other hand, (i) the amplitude of the dielectric function reduces further and (ii) the concentration of the sp(3) CHn (n = 2,3) groups increases. Moreover, we obtained the direct evidence that the sp(2) C bonding state in the a-SiC matrix exists in the configuration of C=CH2 and the generation of the graphite-like C-CH2 unit suppresses the band gap widening significantly. At high C contents of x > 6.3 at.%, the a-SiC:H layers show quite porous structures due to the formation of microvoids terminated with the SiH2/CHn groups. By taking the SiH2/CHn microvoid generation in the network and the high-energy shift of the dielectric function by the local bonding states into account, the a-SiC:H dielectric function model has been established. From the analysis using this model, we have confirmed that the a-SiC:H optical properties in the ultraviolet/visible region are determined almost completely by the local network structures. (C) 2013 AIP Publishing LLC.