Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

标题
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 14, Pages 143507
出版商
AIP Publishing
发表日期
2008-04-12
DOI
10.1063/1.2908926

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