Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

Published 2008 View Full Article

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Title
Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 7, Pages 073504
Publisher
AIP Publishing
Online
2008-08-23
DOI
10.1063/1.2966367
References
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