期刊
APPLIED PHYSICS LETTERS
卷 92, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2899944
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资金
- EPSRC [EP/E000673/1, EP/D080762/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E000673/1, EP/D080762/1] Funding Source: researchfish
Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001) sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 10(8)-10(9) cm(-2), up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density. (c) 2008 American Institute of Physics.
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