Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

Published 2008 View Full Article

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Title
Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 4, Pages 042118
Publisher
AIP Publishing
Online
2008-02-01
DOI
10.1063/1.2840190

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