Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

标题
Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 4, Pages 042118
出版商
AIP Publishing
发表日期
2008-02-01
DOI
10.1063/1.2840190

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