Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

标题
Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 13, Pages 132911
出版商
AIP Publishing
发表日期
2008-04-05
DOI
10.1063/1.2907704

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