Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer

Published 2008 View Full Article

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Title
Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages 183510
Publisher
AIP Publishing
Online
2008-11-08
DOI
10.1063/1.3021360

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