Article
Chemistry, Inorganic & Nuclear
Zohra Nazir Kayani, Ammara Iqbal, Zainab Bashir, Saira Riaz, Shahzad Naseem
Summary: Researchers are increasingly interested in thin film materials due to the growing demand in the electronics industry. In this study, K-doped TiO2 thin films were synthesized using sol-gel dip-coating, and the effects of K concentration on the properties of the films were investigated. The results showed that K doping had a significant impact on the morphological, structural, magnetic, dielectric, antibacterial, and optical characteristics of the TiO2 films.
INORGANIC CHEMISTRY COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Benjamin Borkenhagen, Agnieszka Paszuk, Franz Niklas Knoop, Oliver Supplie, Manali Nandy, Gerhard Lilienkamp, Peter Kleinschmidt, Thomas Hannappel, Winfried Daum
Summary: This study investigates the origin and formation of antiphase domains (APDs) and related defects in GaP buffer layers deposited on As-treated Si substrates using MOCVD. It was found that minority domain terraces on the substrate lead to the formation of APDs, with widths equal to or greater than 40 nm resulting in the growth of APDs.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Optics
Dogan Kaya, Mustafa Akyol, Ebru Senadim Tuzemen, Ahmet Ekicibil
Summary: The optical absorption, band gap, and magnetic properties of ZnO/Ni(t)/ZnO multilayer film structures were investigated, showing that the Ni layer thickness and substrate type have an impact on these properties. Better crystalline directions of ZnO were observed on sapphire substrate, while cubic NiO film formation was found on Si substrate due to thermal oxidation of Ni ions.
Article
Chemistry, Physical
O. Romanyuk, A. Paszuk, I Gordeev, R. G. Wilks, S. Ueda, C. Hartmann, R. Felix, M. Baer, C. Schlueter, A. Gloskovskii, I Bartos, M. Nandy, J. Houdkova, P. Jiricek, W. Jaegermann, J. P. Hofmann, T. Hannappel
Summary: This study investigates the epitaxial growth of GaP films on As-terminated Si substrates and reveals the localization of As atoms in the GaP lattice and at the GaP/Si interface. Chemical shifts in As core levels were observed, and similar valence band offset values were obtained regardless of the doping type, substrate miscut, or As-terminated surface of the Si substrate. The band alignment diagram of the GaP(As)/Si(100) heterostructure was also deduced.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Somi Kim, Taehyun Park, Hyung Joong Yun, Hocheon Yoo
Summary: This paper presents the discovery of morphology-dependent negative differential resistance (NDR) behavior in zinc oxide (ZnO) and p-Si structures. The principle of NDR behavior is elucidated through comprehensive study, offering control of the peak-to-valley current ratio (PVCR).
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Nanoscience & Nanotechnology
Ransheng Chen, Qiang Li, Qifan Zhang, Mingdi Wang, Wannian Fang, Zhihao Zhang, Feng Yun, Tao Wang, Yue Hao
Summary: In this study, a series of h-BN/B1-xAlxN heterojunctions with different Al components were fabricated by RF magnetron sputtering, and the performance of the heterojunctions was measured via I-V characteristic representation. The h-BN/B0.89Al0.11N heterojunction exhibited the best performance due to high lattice matching. XPS analysis revealed a type-II (staggered) band alignment in this heterojunction, and DFT calculation further confirmed the existence of a built-in field and an Al-N covalent bond at the interface. This work provides a pathway for the construction of ultrawide band gap heterojunctions for next-generation photovoltaic applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Azadeh Farzaneh, R. E. Butera
Summary: This study aims to investigate Si thin film growth process on Cl-Si(100). The research found that the diffusion barrier for Si adatoms on Cl-Si(100) is 0.66-0.88 eV and verified through SIMS depth profiling that chlorine segregates towards the growth surface during Si deposition and is effectively removed at 850 K. TEM imaging results confirmed that good film crystallinity can be achieved at low temperatures (600 K).
APPLIED SURFACE SCIENCE
(2022)
Review
Chemistry, Physical
Wei Zhang, Haili He, Haoze Li, Linlin Duan, Lianhai Zu, Yunpu Zhai, Wei Li, Lianzhou Wang, Honggang Fu, Dongyuan Zhao
Summary: This article reviews recent progress in the investigation of visible-light responsive TiO2-based materials, detailing the fabrication strategies, physical and chemical properties, and applications in various fields, with a focus on bandgap engineering, junction engineering, light absorption, charge transfer and separation, as well as surface reactions. New trends and ongoing challenges in this field are proposed and highlighted.
ADVANCED ENERGY MATERIALS
(2021)
Article
Chemistry, Physical
Jagabandhu Pradhan, R. L. Nayak, M. P. K. Sahoo, A. K. Pattanaik
Summary: Defect-dipole and defect-clusters play a significant role in controlling the dielectric behavior in La/Nd co-doped SrTiO3 system, leading to improved dielectric performance and reduced band gap. The doped samples exhibit ferroelectric behavior with enhanced dielectric maximum, attributed to the suppression of grain boundary conductivity and enhancement of grain conductivity due to defect dipoles/clusters within the grain. Additionally, the presence of V ''(Sr) and V-0(center dot center dot) is supported by photoluminescence analysis.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
Xiaoxuan Li, Lichun Zhang, Xiaoyu Zhou, Cheng Wang, Zhiying Zhou, Shunli He, Dan Tian, Zhichao Ren, Chuanlu Yang, Fengzhou Zhao
Summary: In this study, all-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared and used in a heterojunction photodetector. The device showed high sensitivity to deep-ultraviolet light with good stability, offering potential for applications in deep-ultraviolet photodetection.
Article
Chemistry, Multidisciplinary
Ryo Wakabayashi, Kohei Yoshimatsu, Mai Hattori, Jung-Soo Lee, Osami Sakata, Akira Ohtomo
Summary: This study on the lattice and band structures of complete solid-solution beta-(AlxGa1-x)(2)O-3 (x = 0-1) films grown on beta-Ga2O3 substrates revealed that oxygen-plasma treatment was key to achieving a two-dimensional growth mode. The band gap of beta-(AlxGa1-x)(2)O-3 increased with x, showing anomalous bowing behavior around x ≈ 0.5.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Manali Nandy, Agnieszka Paszuk, Markus Feifel, Christian Koppka, Peter Kleinschmidt, Frank Dimroth, Thomas Hannappel
Summary: The study demonstrates the use of high-quality virtual substrates, such as GaP/AlP pulsed nucleation layers, to improve the crystalline quality and reduce crystal defects in III-V multilayer structures grown on Si(100) wafers, ultimately enhancing device performance.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Materials Science, Multidisciplinary
Alejandro Pena-Torres, Abid Ali, Michail Stamatakis, Hannes Jonsson
Summary: Calculations reveal that the diffusion of a Au adatom on the reconstructed Si(100)-2 x 1 surface involves an indirect mechanism where the adatom is promoted to higher-energy sites on top of a dimer row before migrating along the row. This top-of-row mechanism becomes more significant at lower temperatures.
Article
Chemistry, Inorganic & Nuclear
Zhen Gao, Xin He, Wenzhong Li, Yao He, Kai Xiong
Summary: In this study, the electronic properties of two-dimensional Janus STiXY2 materials were investigated using first principles. It was found that the electronic characteristics of these materials can be controlled under biaxial strain and an applied electric field. The results suggest that these materials are structurally stable and have indirect band gaps, making them potential candidates for electronic devices. The STiGeP2 monolayer exhibits the highest electron carrier mobility in the x-direction, while the STiGeAs2 monolayer shows the highest electron carrier mobility in the y-direction.
DALTON TRANSACTIONS
(2023)
Article
Chemistry, Multidisciplinary
Zehui Zhang, Jingyi Hu, Pengfei Yang, Shuangyuan Pan, Wenzhi Quan, Ning Li, Lijie Zhu, Yanfeng Zhang
Summary: The formation of various striped moire superstructures on the Au(100) facet has been observed for monolayer WSe2, leading to tunability of the electronic band gap for monolayer WSe2/Au(100). The coupling strength between monolayer WSe2/Au(100) and different striped patterns can be modulated by the relative orientations, providing a fundamental reference for future applications in electronics and optoelectronics.
