Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

Visible-Color-Tunable Light-Emitting Diodes

(2011) Young Joon Hong et al.   ADVANCED MATERIALS

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

(2011) A. De Luna Bugallo et al.   APPLIED PHYSICS LETTERS

Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

(2011) A.-L. Bavencove et al.   ELECTRONICS LETTERS

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

(2011) Robert Koester et al.   NANO LETTERS

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

(2010) X. J. Chen et al.   APPLIED PHYSICS LETTERS

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

(2010) Luiz Fernando Zagonel et al.   NANO LETTERS

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

(2009) Di Zhu et al.   APPLIED PHYSICS LETTERS

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

(2008) Fang Qian et al.   NATURE MATERIALS