276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp

(2010) Seongmo Hwang et al.   Applied Physics Express

Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

(2010) Max Shatalov et al.   Applied Physics Express

Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

(2010) Ray-Hua Horng et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

(2009) Vinod Adivarahan et al.   Applied Physics Express

280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

(2009) Vinod Adivarahan et al.   Applied Physics Express

Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

(2008) Sun-Kyung Kim et al.   APPLIED PHYSICS LETTERS

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS