Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

标题
Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
作者
关键词
-
出版物
Applied Physics Express
Volume 3, Issue 2, Pages 025003
出版商
IOP Publishing
发表日期
2010-01-29
DOI
10.1143/apex.3.025003

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search