Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

出版年份 2010 全文链接

标题

作者

关键词

出版物

Volume 3, Issue 9, Pages 091101

出版商

IOP Publishing

发表日期

2010-08-20

DOI

10.1143/apex.3.091101

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