Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

Published 2010 View Full Article

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Title
Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching
Authors
Keywords
-
Journal
Applied Physics Express
Volume 4, Issue 1, Pages 012104
Publisher
IOP Publishing
Online
2010-12-24
DOI
10.1143/apex.4.012104

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