Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

出版年份 2010 全文链接

标题

Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

作者

关键词

-

出版物

Applied Physics Express

Volume 4, Issue 1, Pages 012104

出版商

IOP Publishing

发表日期

2010-12-24

DOI

10.1143/apex.4.012104

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Reagent

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