Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 118, Issue 1, Pages 17-21Publisher
SPRINGER
DOI: 10.1007/s00339-014-8877-2
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Funding
- Russian Scientific Foundation [14-12-01403]
- Russian Science Foundation [14-12-01403] Funding Source: Russian Science Foundation
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Arrays of diamond photoemitters with silicon-vacancy (SiV) photoluminescent (PL) centers have been produced by epitaxy of CVD diamond inside laser-ablated channels in a-Si mask on single crystal or polycrystalline diamond substrates, the mask also serving as Si-doping source. Strong PL emission from the SiV centers with zero-phonon line at 738.6 nm wavelength (6 nm width, 0.8 ns decay time), localized within the photoemitters, has been measured.
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