The influence of ultra-fast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

The effect of ultra-short laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between 12 double and equal-energy pulses (E (p)=0.24 J/cm(2) each, with pulse duration t (p)=430 fs, 800 nm laser wavelength) was varied between 0 and 14 ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3-4 %) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation of the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve ultra-fast laser-assisted micro/nanoprocessing.