Two-temperature model for pulsed-laser-induced subsurface modifications in Si

Published 2013 View Full Article

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Title
Two-temperature model for pulsed-laser-induced subsurface modifications in Si
Authors
Keywords
Pulse Energy, Carrier Density, Free Carrier, Lattice Temperature, Process Window
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 114, Issue 4, Pages 1135-1143
Publisher
Springer Nature
Online
2013-03-27
DOI
10.1007/s00339-013-7668-5
References
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