A nitrogen-doped graphene film prepared by chemical vapor deposition of a methanol mist containing methylated melamine resin

The effect of nitrogen doping on the sheet resistivity of a graphene film is systematically studied by changing the doping concentration. The nitrogen-doped graphene film is grown on a Cu foil by chemical vapor deposition using an ultrasonically generated methanol mist containing methylated melamine resin (simply called 'melamine'). Using this method, it is found that the magnitude of the sheet resistivity is controllable by changing the melamine concentration. Increasing the melamine concentration up to similar to 0.03 % causes a decrease of the sheet resistivity. We explain this by the substitutional doping of nitrogen atoms. A further increase in melamine concentration causes an increase of the sheet resistivity. This increase may be caused by the formation of pyridinic or pyrrolic N instead of substitutional N. Electron energy loss spectroscopy analyses for the carbon K-edge indicate a decrease of pi (au) character with increasing melamine concentration up to 0.08 % and then it recovers for higher concentration. This is due to a separation of the graphitic region and the defective region at high melamine concentration.