Utilizing NDR effect to reduce switching threshold variations in memristive devices

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

(2012) Fabien Alibart et al.   NANOTECHNOLOGY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

Memory effects in complex materials and nanoscale systems

(2011) Yuriy V. Pershin et al.   ADVANCES IN PHYSICS

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Hybrid CMOS/Nanoelectronic Circuits: Opportunities and Challenges

(2009) Konstantin K. Likharev   Journal of Nanoelectronics and Optoelectronics

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B