Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

Large current peak-to-valley ratio observed in CdSe quantum dot/MEH-PPV based nanocomposite heterostructure

(2011) V. Kannan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory

(2011) V. Kannan et al.   APPLIED PHYSICS LETTERS

A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure

(2011) V. Kannan et al.   JOURNAL OF APPLIED PHYSICS

All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

(2011) V. Kannan et al.   JOURNAL OF APPLIED PHYSICS

Memory characteristics of InAs quantum dots embedded in GaAs quantum well

(2009) E. S. Kannan et al.   APPLIED PHYSICS LETTERS

Physical Properties, Intrinsic Defects, and Phase Stability of Indium Sesquioxide

(2009) Aron Walsh et al.   CHEMISTRY OF MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

A write time of 6ns for quantum dot–based memory structures

(2008) M. Geller et al.   APPLIED PHYSICS LETTERS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE