Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

Title
Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED
Authors
Keywords
-
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 105, Issue 2, Pages 369-377
Publisher
Springer Nature
Online
2011-07-12
DOI
10.1007/s00339-011-6508-8

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