Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 100, Issue 1, Pages 197-202Publisher
SPRINGER
DOI: 10.1007/s00339-010-5683-3
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Funding
- ST Microelectronics Catania
- Italian Ministry for Research [RBIP068LNE_001]
- European Commission [MRTN-CT-2006-035735]
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This paper reports on the influence of material defects on the electrical behaviour of AlGaN/GaN heterostructures grown onto off-axis 4H-SiC. A structural characterization revealed the presence of near-surface V-shaped defects, mostly oriented along the miscut direction [11-20]. High electron mobility transistors with the channel oriented along this direction showed a preferential conduction, while a significant reduction of the drain current occurred only along the orthogonal direction. An electrical analysis allowed us to demonstrate the anisotropy of the mobility of the two-dimensional electron gas. These results are important to predict the optimal device design in AlGaN/GaN heterostructures grown onto misoriented 4H-SiC substrates.
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