4.6 Article

Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 97, Issue 3, Pages 553-557

Publisher

SPRINGER
DOI: 10.1007/s00339-009-5436-3

Keywords

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Funding

  1. National Science Council of the Republic of China, Taiwan [NSC 95-2112-M-033-008-MY3, NSC 98-2112-M-033-003-MY3]
  2. National Nano-Device Lab

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This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/A mu m with a field enhancement factor beta of around 793.

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