Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 91, Issue 1, Pages 1-5Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-007-4394-x
Keywords
-
Ask authors/readers for more resources
We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires. The high-speed electrical signal measurements from the photoconductor are performed by an integrated coplanar waveguide transmission line. The demonstrated ability to grow intersecting InP nanowires on hydrogenated microcrystalline Si surfaces will facilitate the construction of ultra-fast photodetectors on a wide range of substrates.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available