High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
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Title
High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 25, Issue 33, Pages 4663-4667
Publisher
Wiley
Online
2013-07-01
DOI
10.1002/adma.201205098
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