High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
出版年份 2013 全文链接
标题
High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 25, Issue 33, Pages 4663-4667
出版商
Wiley
发表日期
2013-07-01
DOI
10.1002/adma.201205098
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