Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayers

Micrometer-scale monolayer patterns of a phosphorus-containing molecular precursor are fabricated on nearly intrinsic Si(100) using nanoimprint lithography. The patterned sample is protected by a SiO2 capping layer applied by electron beam evaporation and subjected to rapid thermal annealing (RTA) to diffuse the phosphorus dopant atoms into the bulk silicon locally.