Multilevel Data Storage Memory Using Deterministic Polarization Control

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electric-field-controlled directional motion of ferroelectric domain walls in multiferroic BiFeO3 films

(2010) S. H. Baek et al.   APPLIED PHYSICS LETTERS

Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

(2010) H. Liu et al.   APPLIED PHYSICS LETTERS

Ferroelastic switching for nanoscale non-volatile magnetoelectric devices

(2010) S. H. Baek et al.   NATURE MATERIALS

Above-bandgap voltages from ferroelectric photovoltaic devices

(2010) S. Y. Yang et al.   Nature Nanotechnology

Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3

(2009) Dhanvir Singh Rana et al.   ADVANCED MATERIALS

Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films

(2009) Ho Won Jang et al.   ADVANCED MATERIALS

Defect-Mediated Polarization Switching in Ferroelectrics and Related Materials: From Mesoscopic Mechanisms to Atomistic Control

(2009) Sergei V. Kalinin et al.   ADVANCED MATERIALS

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

(2009) V. Garcia et al.   NATURE

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

(2009) T. Choi et al.   SCIENCE

Piezoresponse Force Microscopy Studies of Switching Behavior of Ferroelectric Capacitors on a 100-ns Time Scale

(2008) A. Gruverman et al.   PHYSICAL REVIEW LETTERS

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE