Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors

出版年份 2011 全文链接

标题

Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors

作者

关键词

-

出版物

ADVANCED MATERIALS

Volume 23, Issue 45, Pages 5383-5386

出版商

Wiley

发表日期

2011-10-14

DOI

10.1002/adma.201103087

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