Journal
ADVANCED MATERIALS
Volume 20, Issue 21, Pages 4097-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801508
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Funding
- Deutsche Forschungsgerneinschaft (DFG) [DFG-Fr 1671/4-3]
- State of Baden-Wurttemberg
- DFG-Center for Functional Nanostructures (CFN)
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Karlsruhe school of optics and photonics (KSOP)
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A 3D direct laser writing (3D DLW) compatible photoresist, consisting of erbium-doped arsenic trisulfide (Er:AS(2)S(3)) has been developed. This photoresist simultaneously possess a refractive index (n) of 2.45 and photoluminescence at 1.5 mu m wavelength that is also spatially localizable. This enables 3D DLW to produce high-refractive index photonic structures with spatially selective optical activity without the need for post-processing steps.
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