Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures

A 3D direct laser writing (3D DLW) compatible photoresist, consisting of erbium-doped arsenic trisulfide (Er:AS(2)S(3)) has been developed. This photoresist simultaneously possess a refractive index (n) of 2.45 and photoluminescence at 1.5 mu m wavelength that is also spatially localizable. This enables 3D DLW to produce high-refractive index photonic structures with spatially selective optical activity without the need for post-processing steps.