Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures

Title
Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 22, Issue 11, Pages 2276-2284
Publisher
Wiley
Online
2012-03-15
DOI
10.1002/adfm.201102814

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