Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures

标题
Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 22, Issue 11, Pages 2276-2284
出版商
Wiley
发表日期
2012-03-15
DOI
10.1002/adfm.201102814

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