Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula
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Title
Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula
Authors
Keywords
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Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 6, Pages 690-696
Publisher
Wiley
Online
2012-09-15
DOI
10.1002/adfm.201201545
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