Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula

标题
Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 6, Pages 690-696
出版商
Wiley
发表日期
2012-09-15
DOI
10.1002/adfm.201201545

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