Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors
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Title
Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors
Authors
Keywords
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Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 1, Pages 100-107
Publisher
Wiley
Online
2010-11-15
DOI
10.1002/adfm.201001560
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