Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

Title
Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 1, Pages 100-107
Publisher
Wiley
Online
2010-11-15
DOI
10.1002/adfm.201001560

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started