Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires

Published 2014 View Full Article

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Title
Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires
Authors
Keywords
-
Journal
ACS Nano
Volume 8, Issue 4, Pages 3412-3420
Publisher
American Chemical Society (ACS)
Online
2014-03-22
DOI
10.1021/nn4062353

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