Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires

标题
Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires
作者
关键词
-
出版物
ACS Nano
Volume 8, Issue 4, Pages 3412-3420
出版商
American Chemical Society (ACS)
发表日期
2014-03-22
DOI
10.1021/nn4062353

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