Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

Published 2014 View Full Article

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Title
Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 6, Issue 20, Pages 17954-17964
Publisher
American Chemical Society (ACS)
Online
2014-10-01
DOI
10.1021/am504786b

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