Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

出版年份 2014 全文链接

标题

Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

作者

关键词

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出版物

ACS Applied Materials & Interfaces

Volume 6, Issue 20, Pages 17954-17964

出版商

American Chemical Society (ACS)

发表日期

2014-10-01

DOI

10.1021/am504786b

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