Electronic structure of monolayer 1T′-MoTe2 grown by molecular beam epitaxy

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

(2017) Mingu Kang et al.   NANO LETTERS

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

(2017) Byoung Ki Choi et al.   Nanoscale Research Letters

Edge conduction in monolayer WTe2

(2017) Zaiyao Fei et al.   Nature Physics

Quantum spin Hall state in monolayer 1T'-WTe2

(2017) Shujie Tang et al.   Nature Physics

Signature of type-II Weyl semimetal phase in MoTe2

(2017) J. Jiang et al.   Nature Communications

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

(2017) Byoung Ki Choi et al.   Nanoscale Research Letters

Spin-resolved photoemission study of epitaxially grown MoSe2and WSe2thin films

(2016) Sung-Kwan Mo et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Monolayer Single-Crystal 1T′-MoTe2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect

(2016) Carl H. Naylor et al.   NANO LETTERS

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

(2016) Ke Deng et al.   Nature Physics

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Fermi Arcs and Their Topological Character in the Candidate Type-II Weyl SemimetalMoTe2

(2016) A. Tamai et al.   Physical Review X

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Prediction of Weyl semimetal in orthorhombicMoTe2

(2015) Yan Sun et al.   PHYSICAL REVIEW B

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2

(2014) Sujay B. Desai et al.   NANO LETTERS

Large, non-saturating magnetoresistance in WTe2

(2014) Mazhar N. Ali et al.   NATURE

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor

(2014) J. M. Riley et al.   Nature Physics

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

(2014) X. Qian et al.   SCIENCE

The valley Hall effect in MoS2 transistors

(2014) K. F. Mak et al.   SCIENCE

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

(2013) Qingyan Wang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Fully gapped topological surface states in Bi2Se3 films induced by a d-wave high-temperature superconductor

(2013) Eryin Wang et al.   Nature Physics

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS