Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

(2012) L.O. Nyakiti et al.   NANO LETTERS

Atomic-scale transport in epitaxial graphene

(2011) Shuai-Hua Ji et al.   NATURE MATERIALS

Si diffusion path for pit-free graphene growth on SiC(0001)

(2011) G. F. Sun et al.   PHYSICAL REVIEW B

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

(2010) Satoru Tanaka et al.   PHYSICAL REVIEW B

Selective adsorption and electronic interaction ofF16CuPcon epitaxial graphene

(2010) Yi-Lin Wang et al.   PHYSICAL REVIEW B

Direct observation of a widely tunable bandgap in bilayer graphene

(2009) Yuanbo Zhang et al.   NATURE

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Growth mechanism for epitaxial graphene on vicinal6H-SiC(0001)surfaces: A scanning tunneling microscopy study

(2009) M. Hupalo et al.   PHYSICAL REVIEW B

Pit formation during graphene synthesis on SiC(0001):In situelectron microscopy

(2008) J. B. Hannon et al.   PHYSICAL REVIEW B

Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

(2008) P. Lauffer et al.   PHYSICAL REVIEW B

Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001)

(2008) Nicola Ferralis et al.   PHYSICAL REVIEW LETTERS