High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Title
High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
Authors
Keywords
-
Journal
Advanced Science
Volume -, Issue -, Pages 1800844
Publisher
Wiley
Online
2018-06-28
DOI
10.1002/advs.201800844

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