Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 30, Issue 5, Pages 2413-2426Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2014.2346485
Keywords
Condition monitoring (CM); insulated gate bipolar transistor (IGBT); physics-of-failure (PoF); prognostics
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Funding
- International Collaborative R&D Program of Korea Institute of Energy Technology Evaluation and Planning - Korean government's Ministry of Knowledge Economy [20118520020010]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20118520020010] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of renewable energy, hybrid/electric vehicles, and industrial equipment. For safety-critical and mission-critical applications, the reliability of IGBT modules is still a concern. Understanding the physics-of-failure of IGBT modules has been critical to the development of effective condition monitoring (CM) techniques as well as reliable prognostic methods. This review paper attempts to summarize past developments and recent advances in the area of CM and prognostics for IGBT modules. The improvement in material, fabrication, and structure is described. The CM techniques and prognostic methods proposed in the literature are presented. This paper concludes with recommendations for future research topics in the CM and prognostics areas.
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